N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

文件：134.7 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

文件：134.7 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the VDS(V) = 30V\nID= 8.5A (VGS= 10V)\nRDS(ON) < 24mΩ(VGS= 10V)\nRDS(ON)< 30mΩ(VGS= 4.5V)\nRDS(ON)< 48mΩ(VGS= 2.5V);

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to th

文件：115.93 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00653 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

30V N-Channel MOSFET

文件：566.73 Kbytes 页数：6 Pages

AOSMD

万国半导体