丝印：AO4409；Package：SOP-8；P-Channel MOSFET

Features VDS (V) = -30V ID = -15 A Max RDS(ON)

文件：654.15 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：AO4409；Package：SOP-8；P-Channel MOSFET

General Description The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -15 A Max RDS(ON)

文件：365.45 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：4409；Package：SOP-8；P-Channel Enhancement Mode MOSFET

FEATURES -30V/-15A Rosion) =6-8MQ(Max.) @ Vg =-10V Roson =13MQ(Max) @ V,, =-4.5V

文件：1.19956 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

文件：1.83295 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

30V P-Channel MOSFET

General Description The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. * RoHS and Halogen-Free Compliant Product Summary VDS -30V

文件：2.17975 Mbytes 页数：5 Pages

WHXPCB

万和兴电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V ID(at VGS=-10V) -1

文件：262.9 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-10V) ● RDS(ON)

文件：1.38133 Mbytes 页数：4 Pages

KEXIN

科信电子

30V P-Channel MOSFET

文件：254.7 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel MOSFET

XW

芯微半导体

场效应管(MOSFET)

TDSEMIC

拓电半导体