N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

文件：113.04 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source    VDS (V) = 30V\n   ID = 8.5A (VGS = 10V)\n   RDS(ON) < 26mΩ (VGS = 10V)\n   RDS(ON) < 40mΩ (VGS = 4.5V);

AOS

美国万代

SLIDE SWITCHES (SMD)

文件：1.22567 Mbytes 页数：12 Pages

COPAL

尼得科

SLIDE SWITCHES (SMD)

文件：1.22567 Mbytes 页数：12 Pages

COPAL

尼得科

SLIDE SWITCHES (SMD)

文件：1.22567 Mbytes 页数：12 Pages

COPAL

尼得科