AO4404

N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=8.5A(VGS=10V) ●RDS(ON)

AO4404

N-Channel 20V (D-S) MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

AO4404

丝印：AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

GeneralFeatures VDS=30VID=8.5A RDS(ON)

AO4404

丝印：AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

Description TheAO4404usesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=30VID=8.5A RDS(ON)

AO4404

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4404/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectiontot

AO4404

MOSFET：N-Channel;

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

AO4404

N-Channel Enhancement Mode Field Effect Transistor

AO4404A

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4404AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectionto

AO4404A

N-Channel Enhancement Mode Field Effect Transistor; VDS(V) = 30V\nID= 8.5A (VGS= 10V)\nRDS(ON) < 24mΩ(VGS= 10V)\nRDS(ON)< 30mΩ(VGS= 4.5V)\nRDS(ON)< 48mΩ(VGS= 2.5V);

General Description\nThe AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4404A is Pb-free (meets ROHS & Sony 259 specifications). AO4404AL is a Green Product ordering option. AO4404A and AO4404AL are electrically identical.

AO4404AL

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4404AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectionto