N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00653 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

30V N-Channel MOSFET

General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Product Summary VDS

文件：2.77684 Mbytes 页数：6 Pages

WHXPCB

万和兴电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：2.24451 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：2.67175 Mbytes 页数：5 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

文件：116.74 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

文件：566.73 Kbytes 页数：6 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

文件：566.73 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel MOSFET

文件：1.49152 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the VDS(V) = 30V\nID= 8.5A (VGS= 10V)\nRDS(ON) < 24mΩ(VGS= 10V)\nRDS(ON)< 30mΩ(VGS= 4.5V)\nRDS(ON)< 48mΩ(VGS= 2.5V);

AOS

美国万代

低压MOSFET (12V - 30V)

30V N-Channel MOSFET

AOS

美国万代