isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：352.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V - 0.150 廓 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh??Power MOSFET

文件：554.08 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.150 廓 - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh??II Power MOSFET

文件：343.47 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.150 廓, 19.5 A, FDmesh??II Power MOSFET (with fast diode) D짼PAK, I짼PAK, TO-220, TO-220FP, TO-247

文件：820.53 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：398.82 Kbytes 页数：2 Pages

ISC

无锡固电