N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-247 package

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab 100% avalanche tested\nExtremely large avalanche performance\nGate charge minimized\nVery low intrinsic capacitances\nZener-protected;

ST

意法半导体

N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages

文件：798.25 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages

文件：798.25 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages

文件：798.25 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 1200 V, 1.95 廓 typ., 6 A SuperMESH3??Power MOSFET in TO-3PF, TO-220 and TO-247 packages

文件：798.25 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体