isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

丝印：9N150；Package：TO-247；N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET

Features ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMi

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STMICROELECTRONICS

意法半导体

N-channel 1500V - 2.2廓 - 8A - TO-247 Very high voltage PowerMESH??Power MOSFET

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STMICROELECTRONICS

意法半导体

N沟道1500V - 2.2Ohm - 8A - TO-247

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled • Very low on-resistance \n• 100% avalanche tested \n• Gate charge minimized \n• Avalanche ruggedness \n• High speed switching \n• Very low intrinsic capacitances;

ST

意法半导体