丝印：9N150；Package：TO-247；N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET

Features ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMi

文件：258.99 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

9.0A, 1500V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capab

文件：665.68 Kbytes 页数：7 Pages

UTC

友顺

N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET

Features ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMi

文件：258.99 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

9.0A, 1500V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capab

文件：665.68 Kbytes 页数：7 Pages

UTC

友顺