丝印：9R1；SLIM INDUCTOR-RoHS

文件：179.46 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：9R1K2C；Package：PG-TO252；CoolMOS™ Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Fully qualified according to JEDEC for Industrial Applications • Pb-free lead plating; RoHS compliant,available in Halogen free mold compound • Ultra low gate charge

文件：368.95 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：9R103NL；Package：SOP-8；MOSFETs Silicon N-channel MOS (U-MOS-H)

Applications • Switching Voltage Regulators • DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 2.5 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 10.4 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement mo

文件：259.16 Kbytes 页数：9 Pages

TOSHIBA

东芝

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

文件：340.93 Kbytes 页数：10 Pages

Infineon

英飞凌