丝印：9N80K5；Package：DPAK；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFET in a DPAK package

Features • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology

文件：387.62 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：9N80K5；Package：TO-220；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

文件：795.5 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：9N80K5；Package：TO-247；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

文件：795.5 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体