丝印：9N80K5；Package：TO-247；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

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STMICROELECTRONICS

意法半导体

N沟道800 V、0.73 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-247封装

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFET in a DPAK package

Features • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology

文件：387.62 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Ultra-low gate charge

文件：762.38 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 0.9Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.22 Kbytes 页数：2 Pages

ISC

无锡固电