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STL9P3LLH6	文件：628.21 Kbytes Page：14 Pages	Marking：9P3L；Package：PowerFLAT3.3x3.3；P-channel -30 V, 12 m廓 typ., -9 A STripFET??H6 Power MOSFET in a PowerFLAT??3.3x3.3 package Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™H6technology withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness 	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

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文件：628.21 Kbytes

Page：14 Pages

Marking：9P3L；Package：PowerFLAT3.3x3.3；P-channel -30 V, 12 m廓 typ., -9 A STripFET??H6 Power MOSFET in a PowerFLAT??3.3x3.3 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™H6technology withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness 

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

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