型号：FAE9R0SN06AL；Package：DFNWB3X3-8L；Plastic-Encapsulate MOSFETS

DESCRIPTION DS(ON) The FAE9R0SN06AL uses SGT technology and design to provide excellent R with low gate charge. It can be used in a wide variety of applications. FEATURES  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and current  Good stability

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