丝印：9P3L；Package：PowerFLAT3.3x3.3；P-channel -30 V, 12 m廓 typ., -9 A STripFET??H6 Power MOSFET in a PowerFLAT??3.3x3.3 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness 

文件：628.21 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

P沟道-30 V、12 mOhm典型值、-9 A STripFET H6功率MOSFET，PowerFLAT 3.3 x 3.3封装

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

Very low on-resistance

文件：602.01 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

STM
QFN8

STM

信盛

上传：深圳市力拓辉电子有限公司

ST
QFN8

ST

上传：深圳市赛特兴科技有限公司