BC846AQC

Marking：9R；Package：DFN1412D-3；65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •Highvoltage(max.65V) •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

BC846AQC-Q

Marking：9R；Package：DFN1412D-3；65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits •Highpowerdissipationcapability •Highvoltage(max.65V) •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •QualifiedaccordingtoAEC-Q101andrecomme

PTVS20VD1UL

Marking：9R；Package：SOD882P-1；Ultra compact Transient Voltage Suppressor

1.Generaldescription TransientvoltagesuppressorinaDFN1006-2(SOD882P-1)ultrasmallandleadlessSurface- MountedDevice(SMD)packagedesignedtoprotectonelineagainsthighsurgecurrentsandother transients. 2.Featuresandbenefits •Unidirectionalprotectionofoneline •Reve

TCK22975G

Marking：9R；Package：WCSP6E；2A, 25mΩ Load Switch IC with Slew Rate Control Driver

TheTCK2292xGandTCK2297xGareloadswitchICsforpowermanagementwithslewratecontroldriverfeaturingwideinput voltageoperationfrom1.1to5.5V.SwitchONresistanceisonly25mΩ typicalat5.0V,-0.5Aloadconditionandthesefeatureaslewratecontrol driver.TCK2292xGhasout

ADS7046IRUGR

Marking：9R；Package：X2QFN；12-Bit, 3-MSPS, Single-Ended Input, Small-Size, Low-Power SAR ADC

BD87581YG-C

Marking：9R；Package：SSOP5；Automotive Excellent EMI Characteristics Input/Output Rail-to-Rail CMOS Operational Amplifier

AAT2608AINJ-1-T1

Marking：9RXYY；Package：TQFN44-28；Eight-Channel LDO with DC/DC Converter

Features •1.5MHzStep-DownConverter ▪800mA,ExternallyAdjustable ▪SynchronouswithIntegratedSwitches ▪IndependentEnable ▪IndependentInputPowerandGround ▪OperatingInputVoltageRangeof2.7Vto5.5V •LDO1,LDO2,LDO3andLDO4RegulatorsShareSame InputastheStep-downCon

FAE9R0SN06AL

Marking：9R0SN06AL；Package：DFNWB3X3-8L；Plastic-Encapsulate MOSFETS

DESCRIPTION DS(ON) TheFAE9R0SN06ALusesSGTtechnologyanddesigntoprovideexcellentRwithlowgatecharge. Itcanbeusedinawidevarietyofapplications. FEATURES HighdensitycelldesignforultralowRDS(ON) Fullycharacterizedavalanchevoltageandcurrent Goodstability

IPB90R340C3

Marking：9R340C；Package：PG-TO263；CoolMOS??Power Transistor

Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)forindustrialapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge

PSMN9R3-60HS

Marking：9R3S60H；Package：LFPAK56D；N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Appl