丝印：9R340C；Package：PG-TO263；CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for industrial applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge

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INFINEON

英飞凌

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.34Ω(Max)@VGS= 10V DESCRIPTION · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：345.96 Kbytes 页数：2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

文件：189.56 Kbytes 页数：2 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for CoolMOS™ C3 is CoolMOS™ P7\n 900V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌