N沟道600 V、0.031 Ohm典型值、68 A MDmesh M2功率MOSFET，TO-247封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

Excellent output capacitance

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STMICROELECTRONICS

意法半导体

N沟道600 V、0.031 Ohm典型值、68 A MDmesh M2功率MOSFET，TO247-4封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Excellent switching performance thanks to the extra driving source pin \n• Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

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TO-247

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上传：深圳深宇韬电子科技有限公司

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公司现货

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上传：海芯未来半导体电子（深圳）有限公司