汽车级N沟道600 V、37 mOhm典型值、66 A MDmesh DM2功率MOSFET，TO-247封装

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi • AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

意法半导体

Extremely high dv/dt ruggedness

文件：728.08 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 600 V, 37 mΩ typ., 66 A, MDmeshTM DM2 Power MOSFET in a TO-247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastr

文件：311.67 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Extremely high dv/dt ruggedness

文件：728.08 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体