STW72N60DM2AG

汽车级N沟道600 V、37 mOhm典型值、66 A MDmesh DM2功率MOSFET，TO-247封装; • AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STW72N60DM2AG

Extremely high dv/dt ruggedness

72N60DM2

Extremelyhighdv/dtruggedness

STWA72N60DM2AG

Automotive-gradeN-channel600V,37mΩtyp.,66A,MDmeshTMDM2PowerMOSFETinaTO-247longleadspackage

Features •AEC-Q101qualified •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmesh™DM2fastr