isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=69A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 32mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

Excellent switching performance

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STMICROELECTRONICS

意法半导体

汽车级N沟道650 V、0.024 Ohm典型值、69 A MDmesh M5功率MOSFET，TO-247封装

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-bas • Designed for automotive applications and AEC-Q101 qualified \n• Higher VDSSrating \n• Higher dv/dt capability \n• Excellent switching performance \n• Easy to drive \n• 100% avalanche tested;

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意法半导体

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