STW78N65M5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=69A@TC=25℃ ·DrainSourceVoltage- :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=32mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

STW78N65M5

汽车级N沟道650 V、0.024 Ohm典型值、69 A MDmesh M5功率MOSFET，TO-247封装; • Designed for automotive applications and AEC-Q101 qualified \n• Higher VDSSrating \n• Higher dv/dt capability \n• Excellent switching performance \n• Easy to drive \n• 100% avalanche tested;

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.\n\n

STW78N65M5

Excellent switching performance