N-channel 600 V, 0.075 廓, 35 A MDmesh??II Power MOSFET TO-247

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=35A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.088Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

N-channel 600 V, 0.075 廓, 35 A TO-247 FDmesh??Power MOSFET (with fast diode

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STMICROELECTRONICS

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N-channel 600V - 0.075Y - 35A - TO-247 second generation MDmesh™ Power MOSFET

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency 100% avalanche tested\nLow gate input resistance\nLow input capacitance and gate charge;

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N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) Power MOSFET (with fast diode) in a TO-247 package

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is t The worldwide best R\nDS(on)*area amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities.;

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