isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=46A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.049Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Automotive-grade N-channel 650 V, 0.041 typ., 46 A MDmesh V Power MOSFET in a TO-247 package

Description This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power

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STMICROELECTRONICS

意法半导体

汽车级N沟道650 V、0.041 Ohm典型值、46 A MDmesh M5功率MOSFET，TO-247封装

This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior • Designed for automotive applications and AEC-Q101 qualified \n• Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

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意法半导体

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TO-247

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上传：深圳深宇韬电子科技有限公司

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公司现货

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上传：海芯未来半导体电子（深圳）有限公司