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STW28N60M2

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

文件:1.12074 Mbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

STW28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications  LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M

文件:1.11956 Mbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

STW28N60M2

N沟道600 V、0.135 Ohm典型值、22 A MDmesh M2功率MOSFET,TO-247封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications  LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M

文件:1.11956 Mbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

STB28N60M2

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

文件:1.12074 Mbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

STB28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications  LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M

文件:1.11956 Mbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    TO-247

  • Grade:

    Industrial

  • VDSS(V):

    600

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.15

  • Drain Current (Dc)_max(A):

    22

  • PTOT_max(W):

    170

  • Qg_typ(nC):

    36

供应商型号品牌批号封装库存备注价格
ST
24+
TO-247
6180
原装现货,有上库存就有货,假一赔十
询价
ST(意法半导体)
24+
TO-247
8216
支持大陆交货,美金交易。原装现货库存。
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
ST原装
24+
TO-247
30980
原装现货/放心购买
询价
ST/意法
23+
NA
12730
原装正品代理渠道价格优势
询价
ST(意法半导体)
2447
TO-247
105000
600个/管一级代理专营品牌!原装正品,优势现货,长期
询价
STM
25+
TO-247
1675
就找我吧!--邀您体验愉快问购元件!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
22+
NA
11
加我QQ或微信咨询更多详细信息,
询价
ST
23+
TO-247
50000
全新原装正品现货,支持订货
询价
更多STW28N60M2供应商 更新时间2025-11-30 19:30:00