STW55NM60N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=51A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STW55NM60N

Marking：W55NM60N；Package：TO-247；N-channel 600 V, 0.047 ?? 51 A, MDmesh??II Power MOSFET TO-247

STW55NM60ND

N-channel 600 V - 0.047 廓 - 51 A TO-247 FDmesh??II Power MOSFET (with fast diode)

Description ThisFDmesh™IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowon-resistanceandsuperiorswitchingperformance.Itis

STW55NM60ND

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=51A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.06Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.