isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=51A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.06Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：350.77 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：W55NM60N；Package：TO-247；N-channel 600 V, 0.047 ?? 51 A, MDmesh??II Power MOSFET TO-247

文件：329.76 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=51A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.06Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：350.78 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V - 0.047 廓 - 51 A TO-247 FDmesh??II Power MOSFET (with fast diode)

Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is

文件：147.76 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Low input capacitance and gate charge

ST

意法半导体

N-channel 600 V, 47 mOhm typ, 51 A, FDmesh II Power MOSFET in a TO-247 package

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for brid • The worldwide best RDS(on)amongst the fast recovery diode devices in TO-247 \n• 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance \n• High dv/dt and avalanche capabilities;

ST

意法半导体