丝印：24N60DM2；Package：TO-247；N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the world

文件：1.20083 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.175 Ohm典型值、18 A MDmesh DM2功率MOSFET，TO-247封装

These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-re • Extremely low gate charge and input capacitance \n• Lower RDS(on)x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected \n• Extremely high dv/dt and avalanche capabilities;

ST

意法半导体

N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the world

文件：1.20083 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Extremely high dv/dt ruggedness

文件：821.22 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15831 Mbytes 页数：11 Pages

VBSEMI

微碧半导体