丝印：24N60DM2；Package：D2PAK；N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the world

文件：1.20083 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

丝印：24N60DM2；Package：TO-220；N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the world

文件：1.20083 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

丝印：24N60DM2；Package：TO-247；N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the world

文件：1.20083 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体