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SVS24N60FJD2

Marking:24N60FJD2;Package:TO-220FJ-3L;24A, 600V DP MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVS24N60FJD2

Marking:24N60FJD2;Package:TO-220FJ-3L;24A, 600V DP MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVS24N60FJD2

Marking:24N60FJD2;Package:TO-220FJ-3L;24A, 600V DP MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVS24N60FJD2

Marking:24N60FJD2;Package:TO-220FJ-3L;24A, 600V DP MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVS24N60FJD2

Marking:24N60FJD2;Package:TO-220FJ-3L;24A, 600V DP MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVS24N60FJD2

Marking:24N60FJD2;Package:TO-220FJ-3L;24A, 600V DP MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVS24N60FJD2

Marking:24N60FJD2;Package:TO-220FJ-3L;24A, 600V DP MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SVS24N60FJD2

Marking:24N60FJD2;Package:TO-220FJ-3L;24A, 600V DP MOS POWER TRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

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