SVS24N60FJD2中文资料士兰微数据手册PDF规格书

厂商型号	SVS24N60FJD2
功能描述	24A, 600V DP MOS POWER TRANSISTOR
丝印标识	24N60FJD2
封装外壳	TO-220FJ-3L
文件大小	357.52 Kbytes
页面数量	9 页
生产厂商	Silan Microelectronics Joint-stock
企业简称	SILAN【士兰微】
中文名称	杭州士兰微电子股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-26 20:00:00
人工找货	SVS24N60FJD2价格和库存，欢迎联系客服免费人工找货

GENERAL DESCRIPTION

SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high

voltage power MOSFET produced using Silan’s DP MOS technology. It

achieves low conduction loss and switching losses. It leads the design

engineers to their power converters with high efficiency, high power

density, and superior thermal behavior. Furthermore, it’s universal

applicable, for example. it is suitable for hard and soft switching

topologies.

FEATURES

 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V

 New revolutionary high voltage technology

 Ultra low gate charge

 Periodic avalanche rated

 Extreme dv/dt rated

 High peak current capability