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STW24N60DM2中文资料N沟道600 V、0.175 Ohm典型值、18 A MDmesh DM2功率MOSFET，TO-247封装数据手册ST规格书
STW24N60DM2规格书详情
描述 Description
These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
• Extremely low gate charge and input capacitance
• Lower RDS(on)x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
• Extremely high dv/dt and avalanche capabilities
技术参数
- 制造商编号
：STW24N60DM2
- 生产厂家
：ST
- Package
：TO-247
- Grade
：Industrial
- VDSS(V)
：600
- RDS(on)_max(@ VGS=10V)(Ω)
：0.2
- Drain Current (Dc)_max(A)
：18
- PTOT_max(W)
：150
- Qg_typ(nC)
：29
- Features
：Fast recovery diode
- Reverse Recovery Time_typ(ns)
：155
- Qrr_typ(nC)
：956
- Peak Reverse Current_nom(A)
：12.5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
12740 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
2517+ |
TO247 |
8850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
STM |
23+ |
TO-247-3 |
50000 |
原装正品 支持实单 |
询价 | ||
ST/意法半导体 |
23+ |
TO-247-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST |
20+ |
TO-247 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
ST/意法半导体 |
23+ |
TO-247-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 |
