N沟道1050 V、1.4 Ohm典型值、4 A MDmesh K5功率MOSFET，TO-247封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

丝印：7N105K5；Package：TO-247；N-channel 1050 V, 1.4 廓 typ., 4 A MDmesh??K5 Power MOSFETs in TO-220, IPAK and TO-247 packages

文件：989.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Ultra-low gate charge

文件：742.53 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 1050 V, 1.4 廓 typ., 4 A MDmesh??K5 Power MOSFETs in TO-220, IPAK and TO-247 packages

文件：989.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 1050 V, 1.4 廓 typ., 4 A MDmesh??K5 Power MOSFETs in TO-220, IPAK and TO-247 packages

文件：989.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体