N-channel 500 V, 0.1 廓 typ., 22 A MDmesh??II Power MOSFET in D짼PAK, TO-220FP, TO-220, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.17424 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：391.82 Kbytes 页数：2 Pages

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N沟道500 V、0.1 Ohm典型值、22 A MDmesh(TM) II功率MOSFET，TO-247封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

N-channel 500 V, 0.1 廓 typ., 22 A MDmesh??II Power MOSFET in D짼PAK, TO-220FP, TO-220, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.17424 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：321.16 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRIPTION • Drain Current: ID= 22A@ TC=25℃ • Drain Source Voltage : VDSS= 500V(Min) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：265.87 Kbytes 页数：2 Pages

ISC

无锡固电