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STW42N65M5

N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW42N65M5

N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW42N65M5

N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW42N65M5

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB42N65M5

N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB42N65M5

N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB42N65M5

N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB42N65M5

N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB42N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF42N65M5

N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF42N65M5

N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF42N65M5

N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF42N65M5

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=33A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI42N65M5

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=33A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI42N65M5

N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STI42N65M5

N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STI42N65M5

N-channel650V,0.070ohm,33AMDmeshVPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STL42N65M5

N-channel650V,0.070廓,34AMDmesh??VPowerMOSFETinPowerFLAT??8x8HVpackage

Description ThisdeviceisanN-channelMDmesh™VPower MOSFETbasedonaninnovativeproprietary verticalprocesstechnology,whichiscombined withSTMicroelectronics’well-known PowerMESH™horizontallayoutstructure.The resultingproducthasextremelylowonresistance,whichisunmatche

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP42N65M5

N-channel650V,0.070??33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP42N65M5

N-channel650V,0.070廓,33AMDmesh??VPowerMOSFETinI2PAK,TO-220,TO-220FP,D2PAKandTO-247

Description MDmesh™VisarevolutionaryPowerMOSFETtechnologybasedonaninnovativeproprietaryverticalprocess,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedamongsilic

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STW42N65M5

  • 功能描述:

    MOSFET N-Ch 650 Volt 33 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
STMICRO
2305+
原厂封装
8900
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
ST
23+
TO-247
6996
只做原装正品现货
询价
ST
22+
TO-247
15
长源创新-只做原装---假一赔十
询价
ST
2019
TO-247
19700
INFINEON品牌专业原装优质
询价
ST/意法半导体
22+
TO-247-3
6005
原装正品现货 可开增值税发票
询价
ST
22+
TO-3PTO-247
20000
全新原装,支持实单,假一罚十,德创芯微
询价
ST(意法半导体)
23+
TO-247
7814
支持大陆交货,美金交易。原装现货库存。
询价
STM
23+
TO-247
1980
强势库存绝对原装公司现货!
询价
TO-247
1000
原装长期供货!
询价
13+
TO-247
1000
特价热销现货库存
询价
更多STW42N65M5供应商 更新时间2024-5-15 9:00:00