N-Channel MOSFET

FEATURES ·Low input capacitance and gate charge ·Low gate input resistance APPLICATIONS ·Switching applications

文件：290.52 Kbytes 页数：3 Pages

ISC

无锡固电

N-channel 600 V, 0.055 廓 typ., 44 A MDmesh??II Power MOSFET in a TO-247 package

文件：717.88 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：324.61 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道600 V、0.055 Ohm典型值、44 A MDmesh(TM) II功率MOSFET，TO-247封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体