N-channel 650 V, 0.037 廓 typ., 58 A MDmesh??V Power MOSFET in TO-3PF and TO-247 packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

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STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：420.08 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.037 Ohm典型值、58 A MDmesh M5功率MOSFET，TO-247封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) * area \n• Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

ST

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Easy to drive

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STMICROELECTRONICS

意法半导体

N沟道650 V、0.037 Ohm典型值、58 A MDmesh M5功率MOSFET，TO247-4封装

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-bas • Higher VDSrating \n• Higher dv/dt capability \n• Excellent switching performance thanks to the extra driving source pin \n• Easy to drive \n• 100% avalanche tested;

ST

意法半导体