丝印：34N65M5；Package：TO-247；N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.43071 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：436.82 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in TO-247 package

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) * area\n• Higher VDSSrating and high dv/dt capability• Excellent switching performance\n• 100% avalanche tested;

ST

意法半导体

N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.43071 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：314.01 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.43071 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体