首页>STB34N65M5>规格书详情
STB34N65M5中文资料意法半导体数据手册PDF规格书
STB34N65M5规格书详情
特性 Features
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• 100 avalanche tested
Applications
• Switching applications
描述 Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
产品属性
- 型号：
STB34N65M5
- 功能描述：
MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TO-263 |
60000 |
询价 | |||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268521邹小姐 |
询价 | ||
ST/意法 |
24+ |
TO-263 |
39197 |
郑重承诺只做原装进口现货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-263-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST |
25+23+ |
TO-263 |
27150 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
2511 |
TO-263-3 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
ST/意法 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 |
