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STB34N65M5

Marking:34N65M5;Package:D2PAK;N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features •WorldwidebestRDS(on)*area •HigherVDSSratingandhighdv/dtcapability •Excellentswitchingperformance •100avalanchetested Applications •Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB34N65M5

Marking:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF34N65M5

N-channel650V,0.09Ωtyp.,28AMDmesh™VPowerMOSFETsinTO-220FP,I2PAKFP,I2PAKpackages

Features •WorldwidebestRDS(on)*area •HigherVDSSratingandhighdv/dtcapability •Excellentswitchingperformance •100avalanchetested Applications •Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STF34N65M5

N-channel650V,0.09typ.,28AMDmeshVPowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •WorldwidebestRDS(on)*area •HigherVDSSratingandhighdv/dtcapability •Excellentswitchingperformance •100avalanchetested Applications •Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STFI34N65M5

N-channel650V,0.09Ωtyp.,28AMDmesh™VPowerMOSFETsinTO-220FP,I2PAKFP,I2PAKpackages

Features •WorldwidebestRDS(on)*area •HigherVDSSratingandhighdv/dtcapability •Excellentswitchingperformance •100avalanchetested Applications •Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STI34N65M5

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=28A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapp

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI34N65M5

N-channel650V,0.09typ.,28AMDmeshVPowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •WorldwidebestRDS(on)*area •HigherVDSSratingandhighdv/dtcapability •Excellentswitchingperformance •100avalanchetested Applications •Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STL34N65M5

Lowgateinputresistance

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP34N65M5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP34N65M5

N-channel650V,0.09typ.,28AMDmeshVPowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features •WorldwidebestRDS(on)*area •HigherVDSSratingandhighdv/dtcapability •Excellentswitchingperformance •100avalanchetested Applications •Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    STB34N65M5

  • 功能描述:

    MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
23+
TO263
6996
只做原装正品现货
询价
ST/意法
24+
TO-263
326
只做原厂渠道 可追溯货源
询价
ST/意法半导体
22+
TO-263-3
6008
原装正品现货 可开增值税发票
询价
ST(意法半导体)
24+
D2PAK
8498
支持大陆交货,美金交易。原装现货库存。
询价
ST/意法
14+
TO-263
326
深圳原装进口无铅现货
询价
ST
1650+
?
7500
只做原装进口,假一罚十
询价
ST
25+23+
TO-263
27150
绝对原装正品全新进口深圳现货
询价
STMicroelectronics
21+
D2PAK
1000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
ST/意法
23+
TO-263
30000
全新原装现货,价格优势
询价
ST(意法半导体)
2447
D2PAK
105000
1000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
更多STB34N65M5供应商 更新时间2025-7-23 14:24:00