丝印：34N65M5；Package：TO-281；N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in TO-220FP, I2PAKFP, I2PAK packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.05849 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in I2PAKFP package

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba Worldwide best R\nDS(on) * area\nHigher V\nDSSrating and high dv/dt capability\nExcellent switching performance\n100% avalanche tested;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID=28A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 110mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

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ISC

无锡固电

N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

文件：1.43071 Mbytes 页数：22 Pages

STMICROELECTRONICS

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Low gate input resistance

文件：1.10807 Mbytes 页数：15 Pages

STMICROELECTRONICS

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