丝印：GB20NC60V；Package：D2PAK；30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

文件：469.12 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

30 A - 600 V - very fast IGBT

文件：407.05 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

文件：469.12 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

30 A, 600 V, very fast IGBT

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.\n • High frequency operation up to 50 kHz\n• Lower CRES / CIESratio (no cross-conduction susceptibility)• High current capability;

ST

意法半导体