7 A, 600 V, low drop IGBT

This IGBT uses the advanced PowerMESH process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). • Lower on-voltage drop (VCE(sat)) \n• High current capability;

ST

意法半导体

N-CHANNEL 7A - 600V DPAK Power MESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix S identifies a family optimized to achieve minimum on-voltage drop for low frequency a

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STMICROELECTRONICS

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 15A 55W DPAK

STMICROELECTRONICS

意法半导体

TO-263

st

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SOT227

ST

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