IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=1.6V@IC=100A ·High Current Capability ·Off Losses Include Tail Current ·Low Gate Charge APPLICATIONS ·Aluminum Welding Equipment ·Low Frequency Motor Controls ·UPS,PFC ·High Voltage Auxiliaries

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ISC

无锡固电

N-CHANNEL 150A - 600V - ISOTOP PowerMESH??IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1K

文件：274.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、150 A低压降IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz). • High input impedance (voltage driven) \n• Off losses include tail current \n• Low on-voltage drop (Vcesat) \n• High current capability \n• Low gate charge;

ST

意法半导体

Package：SOT-227-4，miniBLOC；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 600V 200A 600W ISOTOP

STMICROELECTRONICS

意法半导体