Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).

General features

■ High input impedance (voltage driven)

■ Low on-voltage drop (Vcesat)

■ Off losses include tail current

■ Low gate charge

■ High current capability

Applications

■ Low frequency motor controls

■ Aluminum welding equipment

STGE200NB60S属于分立半导体产品 > 晶体管 - IGBT - 模块。意法半导体（ST）集团制造生产的STGE200NB60S晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。