STGE200NB60S中文资料N沟道600 V、150 A低压降IGBT数据手册ST规格书

描述 Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).

特性 Features

• High input impedance (voltage driven)
• Off losses include tail current
• Low on-voltage drop (Vcesat)
• High current capability
• Low gate charge

简介

STGE200NB60S属于分立半导体产品的晶体管-IGBT-模块。由制造生产的STGE200NB60S晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。