STGD5NB120SZ数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

特性 Features

• Low on-voltage drop (VCE(sat))
• Off losses include tail current
• High current capability
• High voltage clamping

简介

STGD5NB120SZ属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGD5NB120SZ晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。