STGD3NB60SD数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

特性 Features

HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
HIGH CURRENT CAPABILITY
VERY LOW ON-VOLTAGE DROP (Vcesat)
OFF LOSSES INCLUDE TAIL CURRENT
INTEGRATED WHEELING DIODE

简介

STGD3NB60SD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGD3NB60SD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。