STGD20N45LZAG数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.

特性 Features

• AEC-Q101 qualified
• SCIS energy of 300 mJ @ TJ = 25 °C
• Parts are 100% tested in SCIS
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Very low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor

简介

STGD20N45LZAG属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGD20N45LZAG晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。