STGD20N40LZ中文资料汽车级390 V内部钳制IGBT ESCIS 300 mJ数据手册ST规格书

描述 Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.

特性 Features

• Designed for automotive applications and AEC-Q101 qualified
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor

简介

STGD20N40LZ属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGD20N40LZ晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。