STGD6NC60HD数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

特性 Features

Low on voltage drop (V
cesat)
Very soft ultra fast recovery antiparallel diode
Low C
RES/ C
IESratio (no cross-conduction susceptibility)
High frequency operation

简介

STGD6NC60HD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGD6NC60HD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。