STGD8NC60KDT4中文资料8 A, 600 V short-circuit rugged IGBT数据手册ST规格书

描述 Description

These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.

特性 Features

• Lower on voltage drop (VCE(sat))
• Lower Cres / Cies ratio (no cross-conduction susceptibility)
• Very soft ultra-fast recovery antiparallel diode
• Short-circuit withstand time 10 μs

简介

STGD8NC60KDT4属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGD8NC60KDT4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。