丝印：GD3HF60HD；Package：DPAK；4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features • Minimal tail current • Low conduction and switching losses • Ultrafast soft re

文件：1.32745 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

丝印：GD3HF60HD；Package：DPAK；4.5 A, 600 V very fast IGBT with Ultrafast diode

Features ■ Minimal tail current ■ Low conduction and switching losses ■ Ultrafast soft recovery antiparallel diode Applications Motor drive Description The STGD3HF60HD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) v

文件：925.43 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4.5 A, 600 V very fast IGBT with Ultrafast diode

文件：925.56 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4.5 A, 600 V very fast IGBT with Ultrafast diode

文件：925.56 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

4.5 A、600 V超快IGBT，带超高速二极管

These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. • Minimal tail current \n• Low conduction and switching losses \n• Ultrafast soft recovery antiparallel diode;

ST

意法半导体